Itandukaniro hagati ya BJT na MOSFETs muri sisitemu yo gucunga bateri (BMS)

1. Transiporiste ya Bipolar (BJTs):

(1) Imiterere:BJT ni ibikoresho bya semiconductor hamwe na electrode eshatu: shingiro, emitter, hamwe nuwakusanyije. Bakoreshwa cyane cyane mukwongerera cyangwa guhinduranya ibimenyetso. BJTs isaba akantu gato kinjiza kuri base kugirango igenzure imigendekere minini iri hagati yuwakusanyije na emitter.

(2) Imikorere muri BMS: In BMSPorogaramu, BJTs zikoreshwa mubushobozi bwabo bwo kongera imbaraga. Bafasha gucunga no kugenzura imigendekere yimikorere muri sisitemu, kwemeza ko bateri zashizwemo kandi zisohoka neza kandi neza.

(3) Ibiranga:BJT ifite inyungu nyinshi zubu kandi zifite akamaro cyane mubisabwa bisaba kugenzura neza. Mubisanzwe bumva neza ubushyuhe bwumuriro kandi barashobora guhura nimbaraga nyinshi ugereranije na MOSFETs.

2. Metal-Oxide-Semiconductor Field-Ingaruka Transistors (MOSFETs):

(1) Imiterere:MOSFETs ni ibikoresho bya semiconductor hamwe na terefone eshatu: irembo, isoko, na drain. Bakoresha voltage kugirango bagenzure imigendekere yumuriro hagati yisoko namazi, bigatuma bakora neza muguhindura porogaramu.

(2) Imikorere muriBMS:Muri porogaramu ya BMS, MOSFETs ikoreshwa kenshi mubushobozi bwabo bwo guhinduranya neza. Barashobora kuzimya vuba no kuzimya, kugenzura imigendekere yumuyaga hamwe no kurwanya imbaraga nke no gutakaza ingufu. Ibi bituma biba byiza kurinda bateri zirenze urugero, gusohora cyane, hamwe numuyoboro mugufi.

(3) Ibiranga:MOSFETs ifite inzitizi nyinshi zo kwinjiza no kurwanya-kurwanya, bigatuma ikora neza hamwe no kugabanuka k'ubushyuhe buke ugereranije na BJT. Birakenewe cyane cyane byihuse kandi byihuse byo guhinduranya porogaramu muri BMS.

Incamake:

• BJTsnibyiza kubisabwa bisaba kugenzura neza kuberako inyungu zabo ziriho ubu.
• MOSFETSbahisemo gukora neza kandi byihuse hamwe nubushyuhe bwo hasi, bigatuma biba byiza kurinda no gucunga ibikorwa bya bateri muriBMS.